 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK1515, 2SK1516 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1515, 2SK1516 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1515 2SK1516 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 30 10 30 10 100 150 -55 to +150 Unit V V A A A W C C 2 2SK1515, 2SK1516 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min 2SK1515 V(BR)DSS 2SK1516 V(BR)GSS IGSS 450 500 30 -- -- -- -- -- -- 10 250 V A A V S pF pF pF ns ns ns ns V ns IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 100 A/s ID = 5 A, VGS = 10 V, RL = 6 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4.0 -- -- -- -- -- -- -- -- -- -- 0.6 0.7 7.0 1100 310 50 15 65 95 55 1.0 120 3.0 0.8 0.9 -- -- -- -- -- -- -- -- -- -- ID = 5 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1515 IDSS 2SK1516 Gate to source cutoff voltage ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V * 1 Static Drain to source 2SK1515 RDS(on) on state resistance 2SK1516 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test 3 2SK1515, 2SK1516 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) Maximum Safe Operation Area 50 10 ar ea 20 Drain Current ID (A) 10 O is per lim at ite ion d in by th R is (o DS 10 5 2 1 0.5 0.2 0.1 0.05 PW s 0 n) = s 80 10 1 C D O pe ra s m (1 sh ot pu ls e) m s tio n (T C = 25 40 Ta = 25C 1 2SK1515 2SK1516 0 50 100 Case Temperature TC (C) 150 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 16 7V 6V Drain Current ID (A) Pulse Test Typical Transfer Characteristics 20 VDS = 20 V Pulse Test 16 -25C Ta = 25C ) C Drain Current ID (A) 12 5V 12 75C 8 8 4 VGS = 4 V 0 10 30 40 20 50 Drain to Source Voltage VDS (V) 4 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1515, 2SK1516 Drain to Source Saturation Voltage VDS (on) (V) 10 Pulse Test 8 10 A 6 Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 0.2 0.1 15 V VGS = 10 V 4 5A 2 ID = 2 A 0 8 20 4 12 16 Gate to Source Voltage VGS (V) 0.05 0.5 1 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 2.0 VGS = 10 V Pulse Test 50 VDS = 20 V Pulse Test 20 10 5 2 1 0.5 0.1 TC = -25C 25C 75C 1.6 1.2 ID = 10 A 0.8 2, 5 A 0.4 0 -40 40 0 80 120 Case Temperature TC (C) 160 0.2 0.5 1 2 Drain Current ID (A) 5 10 5 2SK1515, 2SK1516 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 5,000 VGS = 0 f = 1 MHz Ciss Typical Capacitance vs. Drain to Source Voltage 2,000 1,000 500 Capacitance C (pF) 1,000 Coss 100 200 100 50 0.2 10 Crss 0.5 10 1 5 2 Reverse Drain Current IDR (A) 20 5 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) Switching Characteristics 20 Gate to Source Voltage VGS (V) 500 VGS = 10 V VDD = 30 V PW = 2 s, duty < 1% * * VDS Switching Time t (ns) 400 VDD = 100 V 250 V 400 V VGS 16 200 100 50 td (off) 300 12 tf tr 200 VDD = 400 V 250 V 100 V 8 8 20 10 5 0.2 td (on) 100 ID = 7 A 4 0 0 24 32 16 Gate Charge Qg (nc) 40 0.5 2 5 10 1 Drain Current ID (A) 20 6 2SK1515, 2SK1516 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 15 V 8 10 V 4 VGS = 0, -10 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.2 0.1 1.0 TC = 25C 0.1 0.05 ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM PW D = PW T 0.02 0.03 0.01 10 0.01 Pulse hot 1S 100 1m 10 m 100 m Pulse Width PW (s) T 1 10 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T. RL Vin 10 V 50 Vin Vout VDD . = 30 V . 10% 10% 10% 90% td (off) 90% td (on) tr tf 7 2SK1515, 2SK1516 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 8 |
Price & Availability of 2SK1515
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |